Jean-Christophe Harmand

CNRS Senior Researcher (DR1)


Jean-Christophe HARMAND is a CNRS senior researcher. He obtained his PhD degree in Physics at University Paris 7 in 1988 for his work on GaAlAs/GaAs heterojunction bipolar transistors. From 1988 to 1990, he was at the Optoelectronic Research Laboratory of Matsushita (Osaka, Japan) where he studied metamorphic AlGaInAs/GaAs high electron mobility transistors and obtained state-of-the-art transport properties in these lattice-mismatched structures. From 1990 to 1999, he investigated epitaxial growth of III-V materials for micro and opto-electronics at CNET/France Telecom. He developed heterostructures for telecom lasers and electro-absorption modulators. He proposed and grew for the first time GaNAsSb epilayers for near infra-red devices. In 1998, he received the Habilitation à Diriger des Recherches from University Paris 7. From 1999 to 2016, he was a senior researcher at CNRS/LPN (Marcoussis, France) where he coordinated several research activities in molecular beam epitaxy (MBE). In 2004, he started to investigate nanowire growth by catalyst-assisted MBE. From 2006 to 2014, he led the “GdR Nanofils et Nanotubes Semiconducteurs” a French structure fostering research of about 30 teams on semiconductor nanowires. In 2012, he was awarded the CNRS silver medal. In 2015, he implemented MBE sources on a transmission electron microscope. With this unique instrument, his colleagues and himself observed the growth of nanowires in real time and with the atomic resolution. Since the creation of the C2N (Center for Nanoscience and Nanotechnology, a joint unit of CNRS and Université Paris-Saclay) in June 2016, he is at the head of the Department of Materials as well as Deputy Director (among four Deputy Directors) of the Laboratory.

He is author or co-author of 12 patents and about 300 publications in peer-reviewed journals.


Email address

Office number

10 Bd Thomas Gobert
91120 Palaiseau  FRANCE

Phone number
+33 1 70 27 04 76


Research areas