The ELPHYSE team is focused on the epitaxial synthesis of semiconducting materials and the investigation and control of their physical properties, to integrate them ultimately in optoelectronic and microelectronic devices.
Our research activities focus on two main axes:
1. Physics of materials and epitaxial growth
Based on an efficient combination of growth, characterization and modeling, we investigate in depth the crystal growth mechanisms of 2D-films and nanostructures, and their structural, optical and electrical properties.
We study a wide spectrum of objects: III-V semiconducting alloys, strained epitaxial structures, quantum boxes and quantum dots, micro and nanostructures for photonics, materials for spintronics. A large part of our research is devoted to the development of new materials or objects: original alloys, semimagnetic semiconductors, complex epitaxial structures, novel substrates, membranes…
2. Materials for applications
Thanks to our expertise in material science, we establish the potential of the epitaxial structures for applications by elaborating the elementary brick blocs in novel photonic and electronic devices.
Many of these studies involve collaborating with the three other departments of C2N, as well as with numerous French and international academic and industrial partners.
MBE Heterostructures for
III-N Nanowires for Piezoelectrics
In situ Electron Microscopy for Nanomaterial Synthesis
Nanowire growth - Experiment and Theory
Nanowires for Photovoltaics
MOCVD for Photonics
Structure & composition of materials at the nanoscale
October 2021: Laëtitia Barringthon, Prix Jeunes Talents France 2021 L’Oréal-UNESCO Pour les Femmes et la Science
January 2021: New MOCVD reactor installed
November 2019: First MBE heterostructure grown at C2N new site
January 2019: NanoMAX paper selected by APS as Physics Highlights from 2018!