The ELPHYSE team is focused on the epitaxial synthesis of semiconducting materials and the investigation and control of their physical properties, to integrate them ultimately in optoelectronic and microelectronic devices.
Our research activities focus on two main axes:
1. Physics of materials and epitaxial growth
Based on an efficient combination of growth, characterization and modeling, we investigate in depth the crystal growth mechanisms of 2D-films and nanostructures, and their structural, optical and electrical properties.
We study a wide spectrum of objects: III-V semiconducting alloys, strained epitaxial structures, quantum dots and quantum wells, micro and nanostructures for photonics, materials for spintronics. A large part of our research is devoted to the development of new materials or objects: nanowires, original alloys, semimagnetic semiconductors, complex epitaxial structures, novel substrates…
2. Materials for applications
Thanks to our expertise in material science, we establish the potential of the epitaxial structures for applications by elaborating the elementary building blocs in novel photonic and electronic devices.
Many of these studies involve collaborating with the three other departments of C2N, as well as with numerous French and international academic and industrial partners.
News
We are hiring interns for the first semester of 2027: M2 Internship: Shadow-Mask Epitaxy of Superconductor/Semiconductor Hybrid Structures M2 Internship: In-situ TEM Growth of Chiral Tellurium Nanoribbons on Hexagonal Boron Nitride
January 2027: Starting of the ANR project ChiraliTe
November 2026: Qiang Yu defended his thesis on "Electric-field-assisted phase switching in semiconducting nanowires"
March 2026: Nam Hong defended his thesis on "Epitaxy of Crystal Phase Quantum Dots"
March 2026: Chen Wei defended his thesis on "Early stage of III-V nanowire epitaxy on Silicon studied by In-situ TEM"
February 2024: Aristide Lemaître, CNRS silver medal
January 2024: Diana She defended her thesis on "Croissance par épitaxie par jets moléculaires d'hétérostructures BiSb/MnGa pour l'étude de la conversion d'un courant de charge en courant de spin"
Key Figures
Group leader