Frank Glas

CNRS Senior Researcher (DR1)



After studying at Ecole polytechnique (X75), I received my state PhD degree (doctorat d’Etat) in physics from Université Paris-Sud in 1986. I am currently senior scientist (DR1) at CNRS, in charge of the group 'Elaboration and physics of epitaxial structures' at C2N (Palaiseau) and of the CNRS/RFBR International Research Project 'Physics of nanostructures and innovative devices based on compound semiconductors'. My research deals with III-V semiconductor alloys, heterostructures and nanostructures. I have studied experimentally and theoretically the thermodynamics of these systems and their instabilities, their growth modes and growth kinetics as well as strain relaxation and local order. In 1985, I demonstrated for the first time, by transmission electron microscopy, the formation of self-organized quantum dots. I have spent most of the last 15 years studying semiconductor nanowires, focusing on the analysis, the understanding and the modeling of the fundamental mechanisms which govern their formation, on the specificities of their structure and on the fabrication of nanowires with controlled local structure and composition. I have authored more than 140 publications totaling 6000 citations, with a h-index of 38. In 2015, I was elected Honorary member of the prestigious Ioffe Institute (Saint Petersburg), a distinction granted to only one foreign scientist each year.


(since 2018)



  • F. Glas
    Incomplete monolayer regime and mixed regime of nanowire growth

    Physical Review Materials 8, 043401 (2024)

DOI: 10.1103/PhysRevMaterials.8.043401

  • F. Rovaris, W. H. J. Peeters, A. Marzegalli, F. Glas, L. Vincent, L. Miglio, E. P. A. M. Bakkers, M. A. Verheijen, E. Scalise
    2H-Si/Ge for group-IV photonics: on the origin of the extended defects in core-shell nanowires

    ACS Applied Nano Materials 7, 9396 (2024).



  • C. Barbier, L. Largeau, N. Gogneau, L. Travers, C. David, A. Madouri, D. Tamsaout, J.-C. Girard, G. Rodary, H. Montigaud, C. Durand, M. Tchernycheva, F. Glas, J.-C. Harmand
    What triggers epitaxial growth of GaN on graphene?
    Crystal Growth and Design 23, 6517 (2023).



  • F. Glas, F. Panciera, J.-C. Harmand
    Statistics of nucleation and growth of single monomayers in nanowires: Towards a deterministic regime

    Physica status solidi (RRL) - Rapid Research Letters 16, 2100647 (2022).

  • D. Dede, F. Glas, V. Piazza, N. Morgan, M. Friedl, L. Güniat, E. N. Dayi, A. Balgarkashi, V. G. Dubrovskii, A. Fontcuberta i Morral
    Selective area epitaxy of GaAs: the unintuitive role of slit size and pitch

    Nanotechnology 33, 485604 (2022).

  • E. Bellet-Amalric, F. Panciera, G. Patriarche, L. Travers, M. den Hertog, J.-C. Harmand, F. Glas, J. Cibert
    Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires

    ACS Nano 16, 4397 (2022).



  • V. G. Dubrovskii, F. Glas
    Vapor-liquid-solid growth of semiconductor nanowires
    In: Fundamental Properties of Semiconductor Nanowires, ed. by N. Fukata and R. Rurali, Springer (2021).
    DOI: 10.1007/978-981-15-9050-4

  • A. Pishchagin, F. Glas, G. Patriarche, A. Cattoni, J.-C. Harmand, F. Oehler
    Regulated dynamics of droplet consumption in vapor-liquid-solid nanowire growth

    Crystal Growth and Design 21, 4647 (2021).



  • F. Glas, V. G. Dubrovskii
    Energetics and kinetics of monolayer formation in vapor-liquid-solid nanowire growth
    Phys. Rev. Mater. 4, 083401 (2020).
    DOI: 10.1103/PhysRevMaterials.4.083401

  • D. V. Beznasyuk, P. Stepanov, J. L. Rouvière, F. Glas, M. Verheijen, J. Claudon, M. Hocevar
    Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
    Phys. Rev. Mater. 4, 074607 (2020).
    DOI : 10.1103/PhysRevMaterials.4.074607

  • A. Scaccabarozzi, A. Cattoni, G. Patriarche, L. Travers, S. Collin, J.-C. Harmand, F. Glas, F. Oehler
    Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In catalyst
    Nanoscale 12, 18240-18248 (2020).
    DOI: 10.1039/d0nr04139d

  • C. Barbier, T. Zhou, G. Renaud, O. Geaymond, P. Le Fèvre, F. Glas, A. Madouri, A. Cavanna, L. Travers, M. Morassi, N. Gogneau, M. Tchernycheva, J.-C. Harmand, L. Largeau
    In situ X-ray diffraction study of GaN nucleation on transferred graphene
    Cryst. Growth Des. 20, 4013-4019 (2020).
    DOI : 10.1021/acs.cgd.0c00306

  • F. Panciera, Z. Baraissov, G. Patriarche, V. G. Dubrovskii, F. Glas, L. Travers, U. Mirsaidov, J.-C. Harmand
    Phase selection in self-catalysed GaAs nanowires
    Nano Lett. 20, 1669-1675 (2020).
    DOI : 10.1021/acs.nanolett.9b04808

  • D. Pelati, G. Patriarche, L. Largeau, O. Mauguin, L. Travers, F. Brisset, F. Glas, F. Oehler
    Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization
    Thin Solid Films 694, 137737 (2020).

    DOI : 10.1016/j.tsf.2019.137737



  • D. Pelati, G. Patriarche, O. Mauguin, L. Largeau, L. Travers, F. Brisset, F. Glas, F. Oehler
    GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity
    J. Cryst. Growth 519,.84 (2019).

    DOI : 10.1016/j.jcrysgro.2019.05.006t



  • J.-C. Harmand, G. Patriarche, F. Glas, F. Panciera, I. Florea, J.-L. Maurice, L. Travers, Y. Ollivier
    Atomic Step Flow on a Nanofacet
    Phys. Rev. Lett. 121, 166101 (2018), selected as Editors' Suggestion, in Featured in Physics and as APS Physics Highlights of the Year.
    DOI : 10.1103/PhysRevLett.121.166101

  • M. Morassi, L. Largeau, F. Oehler, H.-G. Song, L. Travers, F. Julien, J.-C. Harmand, Y.-H. Cho, F. Glas, M. Tchernycheva, N. Gogneau
    Morphology tailoring and growth mechanism of In-rich InGaN/GaN axial nanowire heterostructures by plasma-assisted molecular beam epitaxy
    Cryst. Growth Des. 18, 2545 (2018).
    DOI : 10.1021/acs.cgd.8b00150

  • F. Oehler, A. Cattoni, A. Scaccabarozzi, G. Patriarche, F. Glas, J.-C. Harmand
    Measuring and modelling the growth dynamics of self-catalyzed GaP nanowire arrays grown by MBE
    Nano Lett. 18, 701 (2018).
    DOI : 10.1021/acs.nanolett.7b03695





Email address

Office number

10 Bd Thomas Gobert
91120 Palaiseau  FRANCE

Phone number
+33 1 70 27 03 71


Research areas