Frank Glas

CNRS Senior Researcher (DR1)

 

 

After studying at Ecole polytechnique (X75), I received my state PhD degree (doctorat d’Etat) in physics from Université Paris-Sud in 1986. I am currently senior scientist (DR1) at CNRS, in charge of the group 'Elaboration and physics of epitaxial structures' at C2N (Palaiseau) and of the CNRS/RFBR International Research Project 'Physics of nanostructures and innovative devices based on compound semiconductors'. My research deals with III-V semiconductor alloys, heterostructures and nanostructures. I have studied experimentally and theoretically the thermodynamics of these systems and their instabilities, their growth modes and growth kinetics as well as strain relaxation and local order. In 1985, I demonstrated for the first time, by transmission electron microscopy, the formation of self-organized quantum dots. I have spent most of the last 15 years studying semiconductor nanowires, focusing on the analysis, the understanding and the modeling of the fundamental mechanisms which govern their formation, on the specificities of their structure and on the fabrication of nanowires with controlled local structure and composition. I have authored more than 140 publications totaling 6000 citations, with a h-index of 38. In 2015, I was elected Honorary member of the prestigious Ioffe Institute (Saint Petersburg), a distinction granted to only one foreign scientist each year.

Publications

(since 2018)

 

2022

• F. Glas, F. Panciera, J.-C. Harmand

Statistics of nucleation and growth of single monomayers in nanowires: Towards a deterministic regime

Physica status solidi (RRL) - Rapid Research Letters 16, 2100647 (2022).

 

2021

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• V. G. Dubrovskii, F. Glas
  Vapor-liquid-solid growth of semiconductor nanowires
  In: Fundamental Properties of Semiconductor Nanowires, ed. by N. Fukata and R. Rurali, Springer (2021).
  DOI: 10.1007/978-981-15-9050-4

 

2020

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• F. Glas, V. G. Dubrovskii
  Energetics and kinetics of monolayer formation in vapor-liquid-solid nanowire growth
  Phys. Rev. Mater. 4, 083401 (2020).
  DOI: 10.1103/PhysRevMaterials.4.083401




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• D. V. Beznasyuk, P. Stepanov, J. L. Rouvière, F. Glas, M. Verheijen, J. Claudon, M. Hocevar
  Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
  Phys. Rev. Mater. 4, 074607 (2020).
  DOI : 10.1103/PhysRevMaterials.4.074607




• A. Scaccabarozzi, A. Cattoni, G. Patriarche, L. Travers, S. Collin, J.-C. Harmand, F. Glas, F. Oehler
  Stable and high yield growth of GaP and In_0.2Ga_0.8As nanowire arrays using In catalyst
  Nanoscale 12, 18240-18248 (2020).
  DOI: 10.1039/d0nr04139d




• C. Barbier, T. Zhou, G. Renaud, O. Geaymond, P. Le Fèvre, F. Glas, A. Madouri, A. Cavanna, L. Travers, M. Morassi, N. Gogneau, M. Tchernycheva, J.-C. Harmand, L. Largeau
  In situ X-ray diffraction study of GaN nucleation on transferred graphene
  Cryst. Growth Des. 20, 4013-4019 (2020).
  DOI : 10.1021/acs.cgd.0c00306




• F. Panciera, Z. Baraissov, G. Patriarche, V. G. Dubrovskii, F. Glas, L. Travers, U. Mirsaidov, J.-C. Harmand
  Phase selection in self-catalysed GaAs nanowires
  Nano Lett. 20, 1669-1675 (2020).
  DOI : 10.1021/acs.nanolett.9b04808




• D. Pelati, G. Patriarche, L. Largeau, O. Mauguin, L. Travers, F. Brisset, F. Glas, F. Oehler
  Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization
  Thin Solid Films 694, 137737 (2020).
  DOI : 10.1016/j.tsf.2019.137737

 

2019

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• D. Pelati, G. Patriarche, O. Mauguin, L. Largeau, L. Travers, F. Brisset, F. Glas, F. Oehler
  GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity
  J. Cryst. Growth 519,.84 (2019).
  DOI : 10.1016/j.jcrysgro.2019.05.006t

 

2018

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• J.-C. Harmand, G. Patriarche, F. Glas, F. Panciera, I. Florea, J.-L. Maurice, L. Travers, Y. Ollivier
  Atomic Step Flow on a Nanofacet
  Phys. Rev. Lett. 121, 166101 (2018), selected as Editors' Suggestion, in Featured in Physics and as APS Physics Highlights of the Year.
  DOI : 10.1103/PhysRevLett.121.166101




• M. Morassi, L. Largeau, F. Oehler, H.-G. Song, L. Travers, F. Julien, J.-C. Harmand, Y.-H. Cho, F. Glas, M. Tchernycheva, N. Gogneau
  Morphology tailoring and growth mechanism of In-rich InGaN/GaN axial nanowire heterostructures by plasma-assisted molecular beam epitaxy
  Cryst. Growth Des. 18, 2545 (2018).
  DOI : 10.1021/acs.cgd.8b00150




• F. Oehler, A. Cattoni, A. Scaccabarozzi, G. Patriarche, F. Glas, J.-C. Harmand
  Measuring and modelling the growth dynamics of self-catalyzed GaP nanowire arrays grown by MBE
  Nano Lett. 18, 701 (2018).
  DOI : 10.1021/acs.nanolett.7b03695