Noëlle Gogneau

CNRS Researcher (CR)

Dr. Noelle Gogneau received her Ph.D. degree in Physics in 2004. During her PhD period, she has focused her research activity on the growth of GaN/AlN quantum dots by plasma-assisted-MBE, with the development of a new epitaxial technique to grow the nanostructures, named Modified Stransky-Krastanow growth mode. After a post-doctoral position at the Laboratory of Physics of Nanostructures – EPFL – Lausanne, Switzerland from 2004 to 2006, centred on the growth of (Ga,Al)As/GaAs nanowires and quantum dots on patterned substrate by MOVPE, she joined the Laboratory for Photonic and Nanostructures as CNRS researcher in 2006. From 2006 to 2011, her research activity was focused on the selective growth of In(P)As/InP quantum dots on nano-patterned substrate by MOVPE.

From July 2011, her research activities are centered on the growth of III-nitrides nanowires by PA-MBE and their characterization for Nano-Energy applications, with an emphasis on the piezoelectric properties of 1D-nanostructures for the development of a new generation of nano/piezo-generators.

N. G. is currently the Scientific coordinator of the “Properties and application of epitaxial systems” axis of the French research group PULSE.

Publications

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