CNRS Senior Researcher (DR1)
After studying at Ecole polytechnique (X75), I received my state PhD degree (doctorat d’Etat) in physics from Université Paris-Sud in 1986. I am currently senior scientist (DR1) at CNRS, in charge of the group 'Elaboration and physics of epitaxial structures' at C2N (Palaiseau) and of the CNRS/RFBR International Research Project 'Physics of nanostructures and innovative devices based on compound semiconductors'. My research deals with III-V semiconductor alloys, heterostructures and nanostructures. I have studied experimentally and theoretically the thermodynamics of these systems and their instabilities, their growth modes and growth kinetics as well as strain relaxation and local order. In 1985, I demonstrated for the first time, by transmission electron microscopy, the formation of self-organized quantum dots. I have spent most of the last 15 years studying semiconductor nanowires, focusing on the analysis, the understanding and the modeling of the fundamental mechanisms which govern their formation, on the specificities of their structure and on the fabrication of nanowires with controlled local structure and composition. I have authored more than 140 publications totaling 6000 citations, with a h-index of 38. In 2015, I was elected Honorary member of the prestigious Ioffe Institute (Saint Petersburg), a distinction granted to only one foreign scientist each year.
• F. Glas
Incomplete monolayer regime and mixed regime of nanowire growth
Physical Review Materials 8, 043401 (2024)
DOI: 10.1103/PhysRevMaterials.8.043401
• F. Rovaris, W. H. J. Peeters, A. Marzegalli, F. Glas, L. Vincent, L. Miglio, E. P. A. M. Bakkers, M. A. Verheijen, E. Scalise
2H-Si/Ge for group-IV photonics: on the origin of the extended defects in core-shell nanowires
ACS Applied Nano Materials 7, 9396 (2024).
• C. Barbier, L. Largeau, N. Gogneau, L. Travers, C. David, A. Madouri, D. Tamsaout, J.-C. Girard, G. Rodary, H. Montigaud, C. Durand, M. Tchernycheva, F. Glas, J.-C. Harmand
What triggers epitaxial growth of GaN on graphene?
Crystal Growth and Design 23, 6517 (2023).
• F. Glas, F. Panciera, J.-C. Harmand
Statistics of nucleation and growth of single monolayers in nanowires: Towards a deterministic regime
Physica status solidi (RRL) - Rapid Research Letters 16, 2100647 (2022).
• D. Dede, F. Glas, V. Piazza, N. Morgan, M. Friedl, L. Güniat, E. N. Dayi, A. Balgarkashi, V. G. Dubrovskii, A. Fontcuberta i Morral
Selective area epitaxy of GaAs: the unintuitive role of slit size and pitch
Nanotechnology 33, 485604 (2022).
• E. Bellet-Amalric, F. Panciera, G. Patriarche, L. Travers, M. den Hertog, J.-C. Harmand, F. Glas, J. Cibert
Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires
ACS Nano 16, 4397 (2022).
V. G. Dubrovskii, F. Glas
Vapor-liquid-solid growth of semiconductor nanowires
In: Fundamental Properties of Semiconductor Nanowires, ed. by N. Fukata and R. Rurali, Springer (2021).
DOI: 10.1007/978-981-15-9050-4
• A. Pishchagin, F. Glas, G. Patriarche, A. Cattoni, J.-C. Harmand, F. Oehler
Regulated dynamics of droplet consumption in vapor-liquid-solid nanowire growth
Crystal Growth and Design 21, 4647 (2021).
F. Glas, V. G. Dubrovskii
Energetics and kinetics of monolayer formation in vapor-liquid-solid nanowire growth
Phys. Rev. Mater. 4, 083401 (2020).
DOI: 10.1103/PhysRevMaterials.4.083401
D. V. Beznasyuk, P. Stepanov, J. L. Rouvière, F. Glas, M. Verheijen, J. Claudon, M. Hocevar
Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
Phys. Rev. Mater. 4, 074607 (2020).
DOI : 10.1103/PhysRevMaterials.4.074607
A. Scaccabarozzi, A. Cattoni, G. Patriarche, L. Travers, S. Collin, J.-C. Harmand, F. Glas, F. Oehler
Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In catalyst
Nanoscale 12, 18240-18248 (2020).
DOI: 10.1039/d0nr04139d
C. Barbier, T. Zhou, G. Renaud, O. Geaymond, P. Le Fèvre, F. Glas, A. Madouri, A. Cavanna, L. Travers, M. Morassi, N. Gogneau, M. Tchernycheva, J.-C. Harmand, L. Largeau
In situ X-ray diffraction study of GaN nucleation on transferred graphene
Cryst. Growth Des. 20, 4013-4019 (2020).
DOI : 10.1021/acs.cgd.0c00306
F. Panciera, Z. Baraissov, G. Patriarche, V. G. Dubrovskii, F. Glas, L. Travers, U. Mirsaidov, J.-C. Harmand
Phase selection in self-catalysed GaAs nanowires
Nano Lett. 20, 1669-1675 (2020).
DOI : 10.1021/acs.nanolett.9b04808
D. Pelati, G. Patriarche, L. Largeau, O. Mauguin, L. Travers, F. Brisset, F. Glas, F. Oehler
Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization
Thin Solid Films 694, 137737 (2020).
DOI : 10.1016/j.tsf.2019.137737
D. Pelati, G. Patriarche, O. Mauguin, L. Largeau, L. Travers, F. Brisset, F. Glas, F. Oehler
GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity
J. Cryst. Growth 519,.84 (2019).
DOI : 10.1016/j.jcrysgro.2019.05.006t
J.-C. Harmand, G. Patriarche, F. Glas, F. Panciera, I. Florea, J.-L. Maurice, L. Travers, Y. Ollivier
Atomic Step Flow on a Nanofacet
Phys. Rev. Lett. 121, 166101 (2018), selected as Editors' Suggestion, in Featured in Physics and as APS Physics Highlights of the Year.
DOI : 10.1103/PhysRevLett.121.166101
M. Morassi, L. Largeau, F. Oehler, H.-G. Song, L. Travers, F. Julien, J.-C. Harmand, Y.-H. Cho, F. Glas, M. Tchernycheva, N. Gogneau
Morphology tailoring and growth mechanism of In-rich InGaN/GaN axial nanowire heterostructures by plasma-assisted molecular beam epitaxy
Cryst. Growth Des. 18, 2545 (2018).
DOI : 10.1021/acs.cgd.8b00150
F. Oehler, A. Cattoni, A. Scaccabarozzi, G. Patriarche, F. Glas, J.-C. Harmand
Measuring and modelling the growth dynamics of self-catalyzed GaP nanowire arrays grown by MBE
Nano Lett. 18, 701 (2018).
DOI : 10.1021/acs.nanolett.7b03695
Email address
frank.glas. .c2n.upsaclay.fr
Office number
C213
Address
C2N
10 Bd Thomas Gobert
91120 Palaiseau FRANCE
Phone number
+33 1 70 27 03 71
Research areas
